Computer Information Theory

Advances in Non-volatile Memory and Storage Technology by Yoshio Nishi

By Yoshio Nishi

New ideas are wanted for destiny thinning out of nonvolatile reminiscence. Advances in Non-volatile reminiscence and garage Technology presents an outline of constructing applied sciences and explores their strengths and weaknesses.

After an summary of the present marketplace, half one introduces advancements in flash applied sciences, together with advancements in 3D NAND flash applied sciences and flash reminiscence for ultra-high density garage units. half seems to be on the merits of designing part swap reminiscence and resistive random entry reminiscence applied sciences. It seems particularly on the fabrication, houses, and function of nanowire part swap reminiscence applied sciences. Later chapters additionally give some thought to modeling of either steel oxide and resistive random entry reminiscence switching mechanisms, in addition to conductive bridge random entry reminiscence applied sciences. ultimately, half 3 appears to be like to the way forward for substitute applied sciences. The components coated comprise molecular, polymer, and hybrid natural reminiscence units, and quite a few random entry reminiscence units akin to nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive units.

Advances in Non-volatile reminiscence and garage Technology is a key source for postgraduate scholars and educational researchers in physics, fabrics technological know-how, and electric engineering. it's a beneficial device for learn and improvement managers thinking about electronics, semiconductors, nanotechnology, solid-state stories, magnetic fabrics, natural fabrics, and transportable digital devices.

  • Provides an outline of constructing nonvolatile reminiscence and garage applied sciences and explores their strengths and weaknesses
  • Examines advancements to flash know-how, cost trapping, and resistive random entry memory
  • Discusses rising units equivalent to these in response to polymer and molecular electronics, and nanoelectromechanical random entry reminiscence (RAM)

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